I would like to compare my result in an order of magnitude. So, How can I estimate the strength of the electric field in a typical Si PN-junction?
[Physics] Estimation of the internal electric field strength in the pn-junction
electric-fieldssemiconductor-physics
Best Answer
The maximum electric field develops near the depletion layer around the p-n interface. The maximum value, which occurs at $x=o$ (the interface) is given by the equation
$E_{max}=\frac{2(V_{bi}-V-kT/e)}{W}$
where:
$W$: is the width of the depletion layer,
$V_{bi}$: is the difference between the highest and lowest values of the bottom of C-B in the n-type, or the between the highest and lowest values of the top of the V_B in the p-type.
$T$: is the temperature of the semiconductor material
$V$: is the applied voltage
$k$: is Boltzmann’s constant
$e$: the electric charge on the electron