[Physics] Depletion region width in forward bias

semiconductor-physics

In forward bias the electrons from n region move to p region after crossing the depletion region and holes from p region move to n region. But shouldn’t they recombine and hence the width of the depletion region width should remain constant? Why is it decreasing? And I read that the electrons that migrated to the p side now move to the positive terminal of the battery and vice versa for the holes on the n side. But how can they do so without recombining with majority carriers en route( since both the n and p sides outside the depletion region will have majority carriers)??

Best Answer

Thats because there is no such "real" hole in a pn junction. It is actually the electron which is getting enough energy to cross the depletion region and thus reducing its width. Therefore the potential barrier also decreases.

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